一、个人简介
肖永光，男，汉族，1983年6月生，中共党员，湖南新邵人，工学博士，湘潭大学教授、博导。发表SCI学术论文70多篇，授权国家发明专利5项，主持国家自然科学基金面上项目、青年项目各1项，湖南省高新技术产业科技创新引领计划(科技攻关类)项目1项，湖南省教育厅重点项目1项等，获湖南省自然科学奖二等奖1项（排名第二），现为中国仪表功能材料学会电子元器件关键材料与技术专业委会委员、湖南省宇航协会会员。
二、学习工作经历
l 2021年12月—至今，湘潭大学教授；
l 2016年12月—2021年11月，湘潭大学副教授；
l 2013年7月—2016年11月，湘潭大学讲师；
l 2008年9月—2013年6月，湘潭大学材料科学与工程专业硕博连读。
三、主讲课程
《电工与电子技术》、《模拟电子技术基础》、《数字电子技术基础》等
四、研究方向
l 先进信息材料与器件；
五、获奖情况
1. 唐明华、肖永光、唐振华、燕少安、陈卓俊，先进信息功能材料及其低功耗高密度存储器件，湖南省自然科学二等奖，2020年。
六、科研项目
1. 氧化铪基铁电薄膜负电容效应及其超低功耗应用研究，国家自然科学基金面上项目，51872250，主持；
2. 第三代半导体材料碳化硅新CVD法制备技术攻关，湖南省高新技术产业科技创新引领计划(科技攻关类)项目，2020GK2052，主持；
3. 铁电场效应晶体管的负电容效应，国家自然科学基金青年项目，61404113，主持；
4. 氧化铪基铁电栅场效应晶体管负电容的总剂量效应，湖南省教育厅重点项目，19A473，主持。
七、代表性论著
[1] H. Q. Li, Y. Q. Jiang, X. Q. Zhang, F. Zhang, Y. G. Xiao*, M. H. Tang, Z. Y. Zhao, Y. Xu, F. G. Liu, W. S. Zhao, Spintronic terahertz polarization programmable system for information encoding, Optics and Laser Technology, 167, 109717(1-7), 2023.
[2] Y. G. Xiao*, X. H. Da, H. Z. Cao, K. Xiong, G. Li, and M. H. Tang, Modeling of ionizing radiation effects for negative capacitance field-effect transistors, Coatings, 13, 798(1-8), 2023.
[3] Y. G. Xiao, K. C. Kang, L. Y. Tian, K. Xiong, G. Li, M. H. Tang, and Z. Li, Improvement of Ferroelectricity in Ce-Doped Hf0.5Zr0.5O2 Thin Films. Coatings, 12, 1766(1-10), 2022.
[4] Y. G. Xiao, K. C. Kang, L. Y. Tian, K. Xiong, G. Li, M. H. Tang, and Z. Li, Effect of interfacial conductivity on electrical characteristics of negative capacitance field effect transistors. Materials Research Express, 8, 095902(1-7), 2021.
[5] Y. G. Xiao*, F. Q. Tan, L. Yan, G. Li, M. H. Tang and Z. Li, Effect of depolarization field on steep switching characteristics in negative capacitance field effect transistors. Semiconductor Science and Technology, 35, 085005(1-7), 2020.
[6] L. Yan, P.-F. Liu, T. Bo, J. R. Zhang, M. H. Tang, Y. G. Xiao*, and B.-T. Wang, Emergence of superconductivity in a Dirac nodal-line Cu2Si monolayer: ab initio calculations. Journal of Materials Chemistry C, 7, 10926-10932, 2019.
[7] L. Yan, T. Bo, W. X. Zhang, P.-F. Liu, Z. S. Lu, Y. G. Xiao*, M. H. Tang, and B.-T. Wang, Novel structures of two-dimensional tungsten boride and their superconductivity. Physical Chemistry Chemical Physics, 21, 15327-15338, 2019.
[8] H. C. Dong, J. Z. Li, M. G. Chen, H. W. Wang, X. C. Jiang, Y. G. Xiao*, B. Tian, and X. X. Zhang, High-throughput production of ZnO-MoS2-graphene heterostructures for highly efficient photocatalytic hydrogen evolution. Materials, 12(2233), 1-12, 2019.
[9] L.Yan, T. Bo, P.-F. Liu, B.-T. Wang, Y. G. Xiao* and M.-H. Tang, Prediction of phonon-mediated superconductivity in two-dimensional Mo2B2. Journal of Materials Chemistry C, 7, 2589-2595, 2019.
[10] Y. G. Xiao, D. B. Ma, J. Wang, G. Li, S. A. Yan, W. L. Zhang, Z. Li, and M. H. Tang, An improved model for the surface potential and drain current in negative capacitance field effect transistors. RSC Advances, 6, 103210-103214, 2016.
[11] Y. G. Xiao, J. Wang, D. B. Ma, Z. Li, and M. H. Tang, Effect of zirconium or titanium component on electrical properties of PbZr1-xTixO3 gated negative capacitance ferroelectric field-effect transistors. Materials Research Express, 3, 105902(1-6), 2016.
[12] Y. G. Xiao, J. Wang, D. B. Ma, M. H. Tang, Z. Li, An interface charge model for ferroelectric field effect transistor. Integrated Ferroelectrics, 17(1), 54-62, 2016.
[13] Y. G. Xiao, M. H. Tang, J. C. Li, C. P. Cheng, B. Jiang, H. Q. Cai, Z. H. Tang, X. S. Lv, and X. C. Gu, Temperature effect on electrical characteristics of negative capacitance ferroelectric field-effect transistors. Applied Physics Letters, 100 (8), 083508, 2012.
[14] Y. G. Xiao, Y. Xiong, M. H. Tang, J. C. Li, C. P. Cheng, B. Jiang, Z. H. Tang, X. S. Lv, H. Q. Cai, X. C. Gu, and Y. C. Zhou, Effect of doping concentration of substrate silicon on retention characteristics in metal-ferroelectric-insulator-semiconductor capacitors. Applied Physics Letters, 100 (17), 173504, 2012.
[15] Y. G. Xiao, Z. J. Chen, M. H. Tang, Z. H. Tang, S. A. Yan, J. C. Li, X. C. Gu, Y. C. Zhou, and X. P. Ouyang, Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors. Applied Physics Letters, 101 (25), 253511, 2012.
[16] Y. G. Xiao, M. H. Tang, Y. Xiong, J. C. Li, C. P. Cheng, B. Jiang, H. Q. Cai, Z. H. Tang, X. S. Lv, X. C. Gu, and Y. C. Zhou, Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors. Current Applied Physics, 12, 1591-1595, 2012.
[17] Y. G. Xiao, Y. Xiong, M. H. Tang, J. C. Li, X. C. Gu, C. P. Cheng, B. Jiang, Z. H. Tang, X. S. Lv, H. Q. Cai, and J. He, Factors for the polarization lifetime in metal-ferroelectric-insulator-semiconductor capacitors. Solid State Electronics, 73, 84-88, 2012.
[18] Y. G. Xiao, M. H. Tang, J. C. Li, B. Jiang and J. He, The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors. Microelectronics Reliability, 52 (4), 757-760, 2012.
[19] Y. G. Xiao, M. H. Tang, H. Y. Xu, J. He, Ferroelectric properties and leakage beh avior in poly (vinylidene fluoride-trifluoroethylene) ferroelectric thin films with additive diethyl phthalate. Integrated Ferroelectrics, 125 (1), 89-97, 2011.
八、知识产权
1. 肖永光; 王江; 马东波; 唐明华，一种提高PZT铁电薄膜负电容的方法，发明专利, 授权, 2017-12-08, 中国, ZL201610110669.5.
2. 肖永光; 谭逢前; 燕罗; 唐明华，一种测量铁电薄膜负电容的方法，发明专利,授权,2019-09-10, 中国, ZL201910855628.2.
